Design and analysis of novel bilateral tunnelling based tunnel FET considering workfunction engineered metal strip for enhanced performance-Reference-Cited by-同舟云学术

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Design and analysis of novel bilateral tunnelling based tunnel FET considering workfunction engineered metal strip for enhanced performance

Published:2023-09 Issue: Volume:139 Page:105878
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Kwatra Priyanka,Singh Sajai Vir,Nigam Kaushal

Publisher

Elsevier BV

Subject

General Engineering

Reference34 articles.

1. FinFETs and Other Multi-Gate Transistors;Colinge,2008

2. Effect of lateral straggle parameter on hetero junction dual gate vertical TFET;Nasani;Microelectron. J.,2023

3. Analytical drain current model development of twin gate TFET in subthreshold and super threshold regions;Raut;Microelectron. J.,2023

4. Integration of perovskite Pb [Zr0. 35Ti0. 65] O3/HfO2 ferroelectric-dielectric composite film on Si substrate;Singh;Microelectron. Int.,2020

5. 2-D analytical drain current model of double-gate heterojunction TFETs with a SiO2/HfO2 stacked gate-oxide structure;Kumar;IEEE Trans. Electron. Dev.,2017

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