Design and analysis of novel bilateral tunnelling based tunnel FET considering workfunction engineered metal strip for enhanced performance
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference34 articles.
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2. Effect of lateral straggle parameter on hetero junction dual gate vertical TFET;Nasani;Microelectron. J.,2023
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4. Integration of perovskite Pb [Zr0. 35Ti0. 65] O3/HfO2 ferroelectric-dielectric composite film on Si substrate;Singh;Microelectron. Int.,2020
5. 2-D analytical drain current model of double-gate heterojunction TFETs with a SiO2/HfO2 stacked gate-oxide structure;Kumar;IEEE Trans. Electron. Dev.,2017
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