2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure-Reference-Cited by-同舟云学术

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2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

Published:2018-01 Issue:1 Volume:65 Page:331-338
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kumar Sanjay^ORCID,Singh Kunal,Chander Sweta,Goel Ekta,Singh Prince Kumar,Baral Kamalaksha,Singh Balraj,Jit Satyabrata^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8232422/08123521.pdf?arnumber=8123521

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