Multi-dimensional accumulation gate LDMOS with ultra-low specific on-resistance
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference31 articles.
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4. Novel LDMOS with integrated triple direction high-k gate and field dielectrics;Yao;IEEE Trans. Electron. Dev.,2021
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A semi-cellular Z-type Gate SOI-LDMOS with Improved Gate Control Capability;Microelectronics Journal;2024-09
2. An UMOSFET integrated with graded semi-super-junction and 3C/4H–SiC hetero-crystalline freewheeling junction;Microelectronics Journal;2023-12
3. Study of ultra-low specific on-resistance and high breakdown voltage SOI LDMOS based on electron accumulation effect;Engineering Research Express;2023-08-29
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