Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures-Reference-Cited by-同舟云学术

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Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures

Published:2009-02 Issue:2 Volume:40 Page:370-372
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Kudrawiec R.,Motyka M.,Misiewicz J.,Paszkiewicz B.,Paszkiewicz R.,Tłaczała M.

Publisher

Elsevier BV

Subject

General Engineering

Reference18 articles.

1. The Blue Laser Diode;Nakamura,1998

2. Nitride Semiconductors and Devices;Morkoc,1999

3. Gas sensitive GaN/AlGaN-heterostructures

4. pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

5. Modulation spectroscopy of semiconductors and semiconductor microstructures;Pollak,1994

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic structure and optical properties of N vacancy and O filling on n-GaN (0001) surface;Superlattices and Microstructures;2018-06

2. Contactless electroreflectance study of the surface potential barrier in n-type and p-type InAlAs van Hoof structures lattice matched to InP;Journal of Physics D: Applied Physics;2018-05-04

3. First-principles studies of electronic structure and optical properties of GaN surface doped with Si;Optik;2014-05

4. Contactless electroreflectance of ZnO layers grown by atomic layer deposition at low temperature;Semiconductor Science and Technology;2011-04-11

5. Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method;Journal of Applied Physics;2011-03-15

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