Electronic structure and optical properties of N vacancy and O filling on n-GaN (0001) surface-Reference-Cited by-同舟云学术

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Electronic structure and optical properties of N vacancy and O filling on n-GaN (0001) surface

Published:2018-06 Issue: Volume:118 Page:160-169
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Lu Feifei,Liu Lei,Xia Sihao,Diao Yu,Feng Shu

Funder

Fundamental Research Funds for the Central Universities-China

Six Talent Peaks Project in Jiangsu Province-China

Qing Lan Project of Jiangsu Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Gallium vacancies and the yellow luminescence in GaN;Neugebauer;Appl. Phys. Lett.,1996

2. Effect of light Si doping on the properties of GaN;Shang;Physica B,2016

3. First-principles studies of electronic structure and optical properties of GaN surface doped with Si;Jia;Optik,2014

4. Analysis of InGaN-delta-InN quantum wells for light-emitting diodes;Zhao;Appl. Phys. Lett.,2010

5. Low-threshold-current-density AlGaN-cladding-free -plane InGaN/GaN laser diodes;Farrell;Appl. Phys. Lett.,2010

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1. First-principles study of the effects of Li/Na/K doping and point defects on the magnetic and photocatalytic properties of monolayer GaN (0 0 1);Vacuum;2024-06

2. Stability and electronic properties of low-index surfaces of zinc stannate modulated by vacancy defect: A first-principle study;Physica B: Condensed Matter;2023-06

3. Effects of oxidation on the electronic and optical properties of GaN(0001) surface: First principles study;Micro and Nanostructures;2022-08

4. Influence of N‐vacancy on the electronic and optical properties of bulk GaN from first‐principles investigations;International Journal of Energy Research;2021-04-13

5. Investigation of oxygen impurity in different growth zones of GaN crystal grown by Na-flux method;Journal of Crystal Growth;2020-08

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