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An analytical two-dimensional model for AlGaN/GaN HEMT with polarization effects for high power applications

  • Published:2007-08 Issue:8-9 Volume:38 Page:877-883
  • ISSN:0026-2692
  • Container-title:Microelectronics Journal
  • language:en
  • Short-container-title:Microelectronics Journal

Author:

Tyagi Rajesh K.,Ahlawat Anil,Pandey Manoj,Pandey Sujata

Publisher

Elsevier BV

Subject

General Engineering

Reference23 articles.

1. Emerging gallium nitride based devices;Mohammad;Proc. IEEE,1995

2. Gallium nitride: past, present and future;Yoder;Int. Electron. Dev. Meeting Tech. Dig.,1997

3. GaN based transistors for high power applications;Shur;Solid State Electron.,1998

4. GaN based microwave power HEMTs;Mishra;Proc. Int. Phys. Semicond. Dev. Workshop,1998

5. Wide bandgap semiconductor microwave technologies: from promise to practice;Zolper;Int. Electron. Dev. Meeting Tech. Dig.,1999

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1. Noise in Semiconductor Devices;Synthesis Lectures on Engineering, Science, and Technology;2023-10-17

2. Channel Temperature Analysis and Nonlinear Thermal Model of AlGaN/GaN HEMTs Including Steady-State and Transient;IEEE Transactions on Electron Devices;2023-05

3. Effect of Surface Passivation on the Electrical Characteristics of Nanoscale AlGaN/GaN HEMT;IOP Conference Series: Materials Science and Engineering;2017-08

4. Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications;Superlattices and Microstructures;2015-02

5. An investigation of highly scaled III-nitride Gallium-face and Nitrogen-face HEMTs;Superlattices and Microstructures;2015-02
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