Capacitance–voltage analysis of InAs quantum dots grown on InAlAs/InP(001)
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference27 articles.
1. Electron escape from InAs quantum dots
2. Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots
3. Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
4. Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)
5. Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Charge sensitivity simulation on a double barrier GaAs/InGaAs/InAs quantum dot-in-well hybrid structure photodetector;Optical and Quantum Electronics;2015-01-07
2. Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector;Advances in Condensed Matter Physics;2015
3. Electrical properties of self-assembled InAs/InAlAs quantum dots on InP;Semiconductor Science and Technology;2010-05-18
4. Capacitance–voltage measurements on p–n–p InP structures;Physica B: Condensed Matter;2009-01
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