Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1638892
Reference26 articles.
1. Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
2. Low threshold vertical-cavity surface-emitting lasers based on high contrast distributed Bragg reflectors
3. Vertical cavity lasers based on vertically coupled quantum dots
4. Room‐temperature lasing operation of a quantum‐dot vertical‐cavity surface‐emitting laser
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1. Electronic and intraband optical properties of single quantum rings under intense laser field radiation;Journal of Applied Physics;2014-09-07
2. Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p–i–n GaAs solar cells;Applied Physics Letters;2011-09-12
3. Comprehensive study of InAs/GaAs quantum dots by means of complementary methods;Materials Science and Engineering: B;2009-11
4. Capacitance–voltage analysis of InAs quantum dots grown on InAlAs/InP(001);Microelectronics Journal;2008-01
5. Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP;Microelectronics Journal;2005-03
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