Hydrogen sensors based on AlGaN/AlN/GaN HEMT
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference16 articles.
1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
2. High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy
3. Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AlN/GaN heterostructures grown on sapphire substrates by MOCVD
4. GaN-based diodes and transistors for chemical, gas, biological and pressure sensing
5. High temperature Pt Schottky diode gas sensors on n-type GaN
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3. A modified sintering method to prepare phase pure AlN ceramics: Structural and dielectric studies for microwave applications;Ceramics International;2022-10
4. A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications;Measurement;2021-12
5. Readout Integrated Circuit for Small-Sized and Low-Power Gas Sensor Based on HEMT Device;Sensors;2021-08-21
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