Novel buffer engineering: A concept for fast switching and low loss operation of planar IGBT
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference10 articles.
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2. Imputity profile effects of buffer layer on PT-IGBT characteristics;Kim;IEEE Transactions on Electron Devices,2003
3. Zero voltage switching behavior of punchthrough and nonpunchthrough insulated gate bipolar transistors;Pendharkar;IEEE Transactions on Electron Devices,1998
4. Si/SiGe heterojunction collector for low loss operation of trench IGBT;Kudoh;Applied Surface Science,2004
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