Zero voltage switching behavior of punchthrough and nonpunchthrough insulated gate bipolar transistors (IGBT's)-Reference-Cited by-同舟云学术

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Zero voltage switching behavior of punchthrough and nonpunchthrough insulated gate bipolar transistors (IGBT's)

Published:1998 Issue:8 Volume:45 Page:1826-1835
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Pendharkar S.,Shenai K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/16/15219/00704385.pdf?arnumber=704385

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