Trench IGBT with stepped doped collector for low energy loss

Author:

Vaidya MaheshORCID,Naugarhiya Alok,Verma Shrish

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Low Loss SGT IGBT Design;2024 4th International Conference on Electronics, Circuits and Information Engineering (ECIE);2024-05-24

2. Low Loss Gate Engineered Superjunction Insulated Gate Bipolar Transistor for High Speed Application;2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID);2024-01-06

3. Insulated Gate Bipolar Transistors with Deep Trench Technology for Low Loss Switching Application;2023 International Conference on Modeling, Simulation & Intelligent Computing (MoSICom);2023-12-07

4. 1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application;ECS Journal of Solid State Science and Technology;2022-11-01

5. Dual injection enhanced planar gate IGBT with self-adaptive hole path for better trade-off and higher SOA capability;Semiconductor Science and Technology;2022-10-14

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