Superjunction LDMOS on thick-SOI technology for RF applications
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference13 articles.
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2. Study of novel techniques for reducing self-heating effects in SOI power LDMOS;Roig;Solid State Electron.,2002
3. Switching characteristics of a thin film-SOI power MOSFET;Matsumoto;Jpn. J. Appl. Phys.,1995
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5. Super-junction LDMOST on a silicon-on-sapphire substrate;Nassif-Khalil;IEEE Trans. Electron Devices,2003
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Super junction LDMOS with P-trench and stepped buried oxide layer for high performance;Superlattices and Microstructures;2019-01
2. Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs;IET Power Electronics;2018-10-05
3. An ultra-low specific on-resistance double-gate trench SOI LDMOS with P/N pillars;Superlattices and Microstructures;2017-12
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