Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs-Reference-Cited by-同舟云学术

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Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs

Published:2018-10-05 Issue:14 Volume:11 Page:2198-2203
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Unni Vineet¹,Long Hong Yao¹,Yan Hongyang¹,Nakajima Akira²,Kawai Hiroji³,Sankara Narayanan Ekkanath Madathil¹

Affiliation:

1. Department of Electronic and Electrical EngineeringThe University of Sheffield3 Solly StreetSheffieldS3 7HQUK

2. National Institute of Advanced Industrial Science and TechnologyTsukubaJapan

3. Powdec K.K.1‐23‐15 Wakagi‐choOyamaTochigi323‐0028Japan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2018.5583

Reference15 articles.

1. High breakdown GaN HEMT with over lapping gate structure;Zhang N.‐Q.;IEEE Electron Device Lett.,2000

2. Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

3. Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

4. GaN Power Transistors on Si Substrates for Switching Applications

5. GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current Saturation Behavior in GaN Polarization Superjunction Hybrid Diode;physica status solidi (a);2024-07-09

2. Enhancing Drain Current Performance of AlGaN/GaN HEMT through Graded AlGaN Barrier;2024 7th International Conference on Devices, Circuits and Systems (ICDCS);2024-04-23

3. Effect of SiO₂ Surface Passivation on the Performance of GaN Polarization Superjunction Heterojunction Field Effect Transistors;physica status solidi (a);2023-12-27

4. Evaluation of turn-off dV/dt controllability and switching characteristics of 1.2 kV GaN polarisation superjunction heterostructure field-effect transistors;Japanese Journal of Applied Physics;2023-06-01

5. The improvement of breakdown-voltage (¿2000 V) in GaN based HFETs by using double polarization junctions;Results in Physics;2022-06

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