A numerical study of field plate configurations in RF SOI LDMOS transistors

Author:

Cortés I.,Roig J.,Flores D.,Urresti J.,Hidalgo S.,Rebollo J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Modeling and characterization of an 80V silicon LDMOSFET for emerging RFIC applications;Perugupalli;IEEE Trans Electron Dev,1998

2. Van Rijs F, Visser HA, Magnee PHC. Record power added efficiency of bipolar power transistors for low voltage wireless applications. In: IEEE international electron devices meeting (IEDM), technical digest, December 1998. p. 957–60.

3. Substrate crosstalk reduction using SOI technology;Raskin;IEEE Trans Electron Dev,1997

4. Hot carrier degradation phenomena in lateral and vertical DMOS transistors;Moens;IEEE Trans Electron Dev,2004

5. Xu S, Foo P, Wen J, Liu Y, Lin F, Ren C. RF LDMOS with extreme low parasitic feedback capacitance and high hot carrier immunity. In: IEEE international electron devices meeting (IEDM), technical digest, December 1999. p. 201–4.

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