Improvement of SiO2 surface morphology during the selective Si3N4 etching in the multi-layered 3D NAND Si3N4/SiO2 stack structures by the generation of CO2 gas through the control of redox reaction-Reference-Cited by-同舟云学术

Improvement of SiO2 surface morphology during the selective Si3N4 etching in the multi-layered 3D NAND Si3N4/SiO2 stack structures by the generation of CO2 gas through the control of redox reaction

Published:2022-12 Issue: Volume:35 Page:102484
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Kim Taehyeon,Park Taegun,Son Changjin,Lim Sangwoo^ORCID

Funder

Korea Semiconductor Research Consortium

Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry

Reference36 articles.

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4. Control of adhesion and desorption behavior of silica particles on InGaAs surfaces by addition of hexadecyltrimethylammonium bromide in ammonium hydroxide–hydrogen peroxide mixture solution;Lee;Appl. Surf. Sci.,2022

5. Three-dimensional 128 Gb MLC vertical NAND flash memory with 24-WL stacked layers and 50MB/s high-speed programming;Park;IEEE J. Solid State Circuits,2014

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