p-Type diffusion in InGaAs epitaxial layers using two models: A concentration dependent diffusivity and a point defect nonequilibrium
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference14 articles.
1. Be diffusion mechanisms in InGaAs during post‐growth annealing
2. Beryllium diffusion in GaInAs grown by molecular beam epitaxy
3. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
4. Beryllium δ doping of GaAs grown by molecular beam epitaxy
5. Annealing studies of Be‐doped GaAs grown by molecular beam epitaxy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study;Acta Materialia;2017-02
2. A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism;The European Physical Journal Applied Physics;1999-10
3. Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy;Journal of Crystal Growth;1998-12
4. Be diffusion in GaInAs homojunction structure grown by CBE;Solid State Communications;1998-06
5. Investigation of Be diffusion in InGaAs using Kick-out mechanism;Computational Materials Science;1998-02
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