Microscopic identification of dopant atoms in Mn-doped GaAs layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference13 articles.
1. Diluted magnetic III-V semiconductors
2. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
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5. Self-consistent pseudopotential calculation for the relaxed (110) surface of GaAs
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1. Atomic-scale visualization of the p−d hybridization in III-V semiconductor surfaces doped with transition metal impurities;Physical Review B;2022-06-30
2. Electrical transport mechanisms and structure of hydrogenated and non-hydrogenated nanocrystalline Ga1−xMnxAs films;Journal of Alloys and Compounds;2015-05
3. Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy;Applied Surface Science;2015-04
4. Magnetic Semiconductors;Handbook of Crystal Growth;2015
5. First-principles calculations for point defects in solids;Reviews of Modern Physics;2014-03-28
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