Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

Published:2015-04 Issue: Volume:333 Page:92-95
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Del Río-De Santiago A.,Méndez-García V.H.,Martínez-Velis I.,Casallas-Moreno Y.L.,López-Luna E.,Yu Gorbatchev A.,López-López M.,Cruz-Hernández E.

Funder

Consejo Nacional de Ciencia y Tecnología (CONACyT)

FRC-UASLP

Laboratorio Nacional de Análisis Físicos, Químicos y Biológicos-UASLP

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference31 articles.

1. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

2. Technology and materials issues in semiconductor-based magnetoelectronics

3. Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductors

4. Manganese incorporation behavior in molecular beam epitaxial gallium arsenide

5. Making Nonmagnetic Semiconductors Ferromagnetic

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1. Effect in variation of the cationic precursor temperature on the electrical and crystalline properties of MnS growth by SILAR;Heliyon;2024-02

2. The Effect of Mn Content on the Morphological, Structural and Optical Features of LT-MBE Grown (Ga,Mn)As Thin Films;SSRN Electronic Journal;2022

3. Structural, morphological and magnetic properties of GaSbMn/Si(111) thin films prepared by radio frequency magnetron sputtering;Thin Solid Films;2020-07

4. RHEED and XPS study of palladium interaction with cerium oxide surface;Vacuum;2019-09

5. On the delta-type doping of GaAs-based heterostructures with manganese compounds;Semiconductors;2017-09

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