On the delta-type doping of GaAs-based heterostructures with manganese compounds-Reference-Cited by-同舟云学术

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On the delta-type doping of GaAs-based heterostructures with manganese compounds

Published:2017-09 Issue:9 Volume:51 Page:1141-1147
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Moiseev K. D.,Nevedomsky V. N.,Kudriavtsev Yu.,Escobosa-Echavarria A.,Lopez-Lopez M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S1063782617090159/fulltext.html

Reference19 articles.

1. H. Ohno, J. Magn. Magn. Mater. 200, 110 (1999).

2. A. J. Blattner, J. Lensch, and B. W. Wessels, J. Electron. Mater. 30, 1408 (2001).

3. I. Frymark and G. Kowalski, J. Phys. D: Appl. Phys. 38, A160 (2005).

4. K. D. Moiseev, V. P. Lesnikov, V. V. Podolski, Yu. Kudriavtsev, O. Kudriavtseva, A. Escobosa, and V. Sanchez-Resendiz, Semiconductors 45, 771 (2011).

5. A. M. Nazmul, S. Sugahara, and M. Tanaka, Phys. Rev. B 67, 241308R (2003).

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