Correlation of depth resolution and preferential sputtering in depth profiles of thin layers by Secondary Ion Mass Spectrometry (SIMS)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. On the Delta-type doping of GaAs-based Heterostructures with manganese compounds, ISSN 1063-7826;Moiseev;Semiconductors,2017
2. Chap. 7: Quantitative compositional depth profiling;Hofmann,2013
3. Atomic mixing, surface roughness and information depth in high-resolution AES depth profiling of a GaAs/AlAs superlattice structure;Hofmann;Surf. Interface Anal.,1994
4. From depth resolution to depth resolution function: refinement of the concept for delta layers, single layers and multilayers;Hofmann;Surf. Interface Anal.,1999
5. Progress in quantitative sputter depth profiling using the MRI -model;Hofmann;J. Surf. Anal.,2003
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Restoration of the original depth distribution from experimental SIMS profile using the depth resolution function in framework of RMR model;Journal of Vacuum Science & Technology B;2023-03-01
2. Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B4C/Si Nano-Multilayers;Coatings;2021-05-21
3. Preferential sputtering in quantitative sputter depth profiling of multi-element thin films;Thin Solid Films;2021-03
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