Cubic InN inclusions: Proposed explanation for the small pressure-shift anomaly of the luminescence in InGaN-based quantum wells-Reference-Cited by-同舟云学术

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Cubic InN inclusions: Proposed explanation for the small pressure-shift anomaly of the luminescence in InGaN-based quantum wells

Published:1998-06 Issue:9 Volume:106 Page:567-571
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Weinstein B.A.,Perlin P.,Christensen N.E.,Gorczyca I.,Iota V.,Suski T.,Wisniewski P.,Osinski M.,Eliseev P.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference18 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

3. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

4. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

5. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

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3. Growth of hexagonal and cubic InN nanowires using MOCVD with different growth temperatures;Journal of Crystal Growth;2010-07

4. Pressure behavior of beryllium-acceptor level in gallium nitride;Journal of Applied Physics;2005-02-15

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