Thickness-dependent strain relaxation in epitaxial films studied by spectroscopic ellipsometry
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference16 articles.
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2. In-situ dual-wavelength and ex-situ spectroscopic ellipsometry studies of strained SiGe epitaxial layers and multi-quantum well structures
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4. Optical spectra of SixGe1−xalloys
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1. Strain dependence and deformation potential of the E1 and E1+Δ1 transitions of ZnTe grown on a GaAs (001) substrate;Solid State Communications;2001-11
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