In-situ dual-wavelength and ex-situ spectroscopic ellipsometry studies of strained SiGe epitaxial layers and multi-quantum well structures-Reference-Cited by-同舟云学术

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In-situ dual-wavelength and ex-situ spectroscopic ellipsometry studies of strained SiGe epitaxial layers and multi-quantum well structures

Published:1993-10 Issue:1-2 Volume:233 Page:126-130
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Pickering C.,Carline R.T.,Robbins D.J.,Leong W.Y.,Gray D.E.,Greef R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Correlation of in situ ellipsometric and light scattering data of silicon-based materials with post-deposition diagnostics

2. Spectroscopic ellipsometry characterization of strained and relaxed Si1−xGexepitaxial layers

3. Growth interfaces of Si1−xGex/Si heterostructures studied by in situ laser light scattering

4. J. Humlicek and M. Garriga, Appl. Phys. A, submitted for publication.

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100%;Applied Surface Science;2017-11

2. Short-period SinGem strained-layer superlattices grown from gas sources by synchrotron-radiation-excited chemical-beam epitaxy;Applied Physics Letters;2003-07-21

3. Spectro-ellipsometric monitoring and characterization of the growth of Si/Si1−xGex multiple quantum wells;Journal of Crystal Growth;2002-04

4. Solid-phase crystallization of Si1−xGex alloy layers;Journal of Applied Physics;2001-02-15

5. Distinct morphological evolution of Si1-xGex films on Si(100) during gas-source MBE and photo-CVD;Springer Proceedings in Physics;2001

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