The Hall mobility and its relationship to the persistent photoconductivity of undoped GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference20 articles.
1. The role of dislocation scattering in n-type GaN films
2. Novel metalorganic chemical vapor deposition system for GaN growth
3. A new buffer layer for high quality GaN growth by metalorganic vapor phase epitaxy
4. Influence of potential fluctuation on optical and electrical properties in GaN
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