The Hall mobility and its relationship to the persistent photoconductivity of undoped GaN

Author:

Li G,Chua S.J,Wang W

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Plasma-enhanced atomic layer deposition of crystalline GaN thin films on quartz substrates with sharp interfaces;Journal of Vacuum Science & Technology A;2023-08-31

2. Persistence in photoconductivity and optical property of nanostructured copper (II) phthalocyanine thin films;Current Applied Physics;2010-07

3. Carrier transport and capture in GaN single crystals and radiation detectors and effect of the neutron irradiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-11

4. Study of activation of beryllium implantation in gallium nitride;Journal of Crystal Growth;2004-08

5. Hole mobility in zincblende c–GaN;Journal of Applied Physics;2004-05

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