Hole mobility in zincblende c–GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1690865
Reference35 articles.
1. Progress and prospects of group-III nitride semiconductors
2. Progress and prospects of group-III nitride semiconductors
3. GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors
4. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
5. Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure
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