Optical transitions involving impurities in semiconductors under additional infrared laser radiation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
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1. Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field;Journal of Luminescence;2012-06
2. Transverse laser dressing effects on the subband density of states in a 20-nm-wide GaAs/Al0.3Ga0.7As quantum well wire;Physica E: Low-dimensional Systems and Nanostructures;2012-04
3. Laser field-driven potential profiles of double quantum wells;Physics Letters A;2012-01
4. The effect of hydrostatic pressure on subband structure and optical transitions in modulation-doped quantum well;Superlattices and Microstructures;2011-06
5. Inter-sub-band transitions and binding energies of donor impurities in a modulation-doped quantum well in the presence of electric field;Superlattices and Microstructures;2009-12
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