Inter-sub-band transitions and binding energies of donor impurities in a modulation-doped quantum well in the presence of electric field
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference29 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. L. Esaki, R. Tsu, IBM Res. Rep., RC–2418, 1969
3. Two‐dimensional electron gas at differentially doped GaAs–AlxGa1−xAs heterojunction interface
4. Physics and Applications of Quantum Wells and Superlatices;Mendez,1987
5. Electronic structure of modulation-doped heterostructures: electric field effects
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Nonlinear optical properties in AlxGa1-xAs/GaAs double-graded quantum wells: The effect of the structure parameter, static electric, and magnetic field;Solid State Communications;2022-02
2. Combined effects of the hydrostatic pressure and temperature on the self-polarization in a finite quantum well under laser field;Superlattices and Microstructures;2021-07
3. The nonlinear optical absorption in $$\hbox {Al}_{{x}}\hbox {Ga}_{1-x}$$As/GaAs double-graded quantum wells: magnetic field effect and the position-dependent effective mass effect;The European Physical Journal Plus;2021-05
4. The effect of impurity position and doping concentration on the binding energies and total optical absorption coefficients in a $${\delta }$$-doped quantum well;The European Physical Journal Plus;2021-04
5. Electronic and Optical Properties of Quantum Dot Surrounded by Doped Cylindrical Nanowire;Acta Physica Polonica A;2020-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3