Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field-Reference-Cited by-同舟云学术

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Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field

Published:2012-06 Issue:6 Volume:132 Page:1584-1588
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Sakiroglu S.,Yesilgul U.,Ungan F.,Duque C.A.,Kasapoglu E.,Sari H.,Sokmen I.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference41 articles.

1. The binding energy of excitons in a cylindrical quantum wire under the influence of laser field intensity

2. Gain and the threshold of three-dimensional quantum-box lasers

3. Quantum Wells, Wires and Dots;Harrison,2000

4. Impurity-related optical-absorption spectra inGaAs−Ga1−xAlxAssuperlattices with an in-plane magnetic field

5. Dressed-band theory for semiconductors in a high-intensity infrared laser field

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1. Hydrostatic pressure and temperature effects on nonlinear optical properties in harmonic-Gaussian asymmetric double quantum wells;Physica Scripta;2024-03-18

2. Effect of structural parameters and applied external fields on the third harmonic generation coefficient of AlGaAs/GaAs three-step quantum well;The European Physical Journal Plus;2024-01-17

3. Influence of structural variables and external perturbations on the nonlinear optical rectification, second, and third-harmonic generation in the InP/InGaAs triple quantum well structure;The European Physical Journal Plus;2023-11-14

4. Optical manipulation of linear magnetogyrotropic photogalvanic effect in a GaAs/Al0.3Ga0.7As heterostructure;Applied Physics Letters;2023-08-21

5. Investigation on nonlinear optical properties of symmetric and asymmetric double V-shaped Al_xGa_1-xAs/GaAs potential wells with structural parameters and external electromagnetic fields;Philosophical Magazine;2023-02-10

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