Excitonic field screening and bleaching in InGaN/GaN multiple quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference20 articles.
1. III–nitrides: Growth, characterization, and properties
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3. Origin of Luminescence from InGaN Diodes
4. Spatially resolved cathodoluminescence spectra of InGaN quantum wells
5. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
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3. Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band;Journal of Crystal Growth;2017-02
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5. Landau description for an atomic screened system: the charge symmetry breaking effect;The European Physical Journal D;2009-11-06
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