Radiation resistance of photodiodes based on indium monoselenides under γ-irradiation-Reference-Cited by-同舟云学术

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Radiation resistance of photodiodes based on indium monoselenides under γ-irradiation

Published:2009-03 Issue:2 Volume:385 Page:489-494
ISSN:0022-3115
Container-title:Journal of Nuclear Materials
language:en
Short-container-title:Journal of Nuclear Materials

Author:

Kovalyuk Z.D.,Politanska O.A.,Tkachenko V.G.,Maksymchuk I.N.,Dubinko V.V.,Savchuk A.I.

Publisher

Elsevier BV

Subject

Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics

Reference22 articles.

1. Effect of neutron radiation on the photoelectric parameters of p-n-InSe structures

2. Electrical and photoelectric characteristics of structures based on InSe and GaSe layered semiconductors irradiated with 12.5-MeV electrons

3. Effect of gamma radiation on the properties of InSe photodiodes

4. γ-Radiation influence on the photoelectrical properties of oxide–p-InSe heterostructure

5. Characteristics of Impurity-Doped GaSe Radiation Detectors

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Graphite/n-InSe photosensitive junctions fabricated by transferring dry drawn graphite film onto as-cleaved surface of InSe;Functional Materials;2020-09-25

2. Spectral and photoelectric characteristics of the gamma irradiated intrinsic oxide –ІnSe heterostructures obtained under different conditions;Radiation Physics and Chemistry;2016-09

3. Growth of InSe:Mn semiconductor crystals by Bridgman–Stockbarger technique and analysis of electron irradiation effects on Sn/InSe:Mn Schottky diodes;Radiation Effects and Defects in Solids;2016-05-03

4. Two-band conduction in electron-irradiated n-InSe single crystals;physica status solidi (b);2014-09-26

5. Effect of bremsstrahlung γ-ray photons and neutrons on the parameters of indium-selenium photoconverters;Semiconductors;2014-02

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