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Electrical and photoelectric characteristics of structures based on InSe and GaSe layered semiconductors irradiated with 12.5-MeV electrons

  • Published:2008-11 Issue:11 Volume:42 Page:1292-1297
  • ISSN:1063-7826
  • Container-title:Semiconductors
  • language:en
  • Short-container-title:Semiconductors

Author:

Kovalyuk Z. D.,Politanska O. A.,Sydor O. N.,Maslyuk V. T.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Z. D. Kovalyuk, V. M. Katerynchuk, A. I. Savchuk, and O. M. Sydor, Mater. Sci. Eng. B 109, 252 (2004).

2. V. N. Katerinchuk and M. Z. Kovalyuk, Fiz. Tekh. Poluprovodn. 25, 954 (1991) [Sov. Phys. Semicond. 25, 577 (1986)].

3. V. L. Bakumenko, Z. D. Kovalyuk, L. N. Kurbatov, et al., Fiz. Tekh. Poluprovodn. 14, 1115 (1980) [Sov. Phys. Semicond. 14, 661 (1980)].

4. A. P. Bakhtinov, Z. D. Kovalyuk, O. N. Sidor, et al., Fiz. Tverd. Tela 49, 1497 (2007) [Phys. Solid State 49, 1572 (2007)].

5. K. A. Askerov, Fizika 2(2), 36 (1996).
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