Growth of InSe:Mn semiconductor crystals by Bridgman–Stockbarger technique and analysis of electron irradiation effects on Sn/InSe:Mn Schottky diodes
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
http://www.tandfonline.com/doi/pdf/10.1080/10420150.2016.1217411
Reference51 articles.
1. Structural and electrical properties of InSe polycrystalline films and diode fabrication
2. Structural and electrical properties of In2O3/SeO2thin films for gas-sensing applications
3. Recent developments in II–VI and III–VI semiconductors and their applications in solar cells
4. Electrical parameters of Al/InSe/C RF sensors
5. High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response
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