The influence of preferred crystallographic orientation on blister size distribution in helium implanted surfaces
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference9 articles.
1. Channelling effect on helium implantation behavior in copper single crystal
2. A study of the influence of near-surface He concentration on the blistering formation in CuBe
3. Profile Code - Implant Science Corp. Ion Implant Profile Code D0923, Audubon Roud, Wakefield MA 01880, U.S.A.
4. The Stopping Range of Ions in Solids;Zigler,1985
5. Computer simulation of ion implantation into crystalline targets
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A new peeling mechanism of blisters involving surface diffusion;Scripta Materialia;2011-10
2. On the blister formation in copper alloys due to the helium ion implantation;Metallurgical and Materials Transactions A;1997-03
3. On the blister formation in copper alloys due to the helium ion implantation;Metallurgical and Materials Transactions A;1997-03
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