Spatially inhomogeneous operation of phase-change memory-Reference-Cited by-同舟云学术

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Spatially inhomogeneous operation of phase-change memory

Published:2022-07 Issue: Volume:589 Page:153026
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kim Dasol,Hwang Soobin,Jung Taek Sun,Ahn Min,Jeong Jaehun,Park Hanbum,Park Juhwan,Hoon Kim Jae,Choi Byung Joon,Cho Mann-Ho

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference45 articles.

1. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing;Zhang;Nat. Rev. Mater.,2019

2. Recommended Methods to Study Resistive Switching Devices;Lanza;Adv. Electron. Mater.,2019

3. Ultrafast characterization of phase-change material crystallization properties in the melt-quenched amorphous phase;Jeyasingh;Nano Lett.,2014

4. Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing;Kuzum;Nano Lett.,2012

5. Ultralow –switching current density multilevel phase-change memory on a flexible substrate;Khan;Science.1247,2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AgSbTe2 semi-nanocrystalline thin films as a multifunctional platform for optoelectronic and diode applications;Ceramics International;2023-10

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