Ultrafast Characterization of Phase-Change Material Crystallization Properties in the Melt-Quenched Amorphous Phase-Reference-Cited by-同舟云学术

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Ultrafast Characterization of Phase-Change Material Crystallization Properties in the Melt-Quenched Amorphous Phase

Published:2014-05-07 Issue:6 Volume:14 Page:3419-3426
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Jeyasingh Rakesh¹,Fong Scott W.¹,Lee Jaeho²,Li Zijian²,Chang Kuo-Wei³,Mantegazza Davide³,Asheghi Mehdi²,Goodson Kenneth E.²,Wong H.-S. Philip¹

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States

2. Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States

3. Intel Corporation, 2200 Mission College Blvd, Santa Clara, California 95054, United States

Funder

National Science Foundation

Semiconductor Research Corporation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl500940z

Reference35 articles.

1. Phase Change Memory

2. Overview of candidate device technologies for storage-class memory

3. Highly productive PCRAM technology platform and full chip operation: Based on 4F2(84nm pitch) cell scheme for 1 Gb and beyond

4. Interfacial phase-change memory

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