Mechanically accessible band engineering via indentation-induced phase transition on two-dimensional layered β-InSe-Reference-Cited by-同舟云学术

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Mechanically accessible band engineering via indentation-induced phase transition on two-dimensional layered β-InSe

Published:2022-12 Issue: Volume:604 Page:154573
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhao Chaopeng,Yan Weishan,Han Suqin,Zhang Wangyang,Jin Min,Liu Duo

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference67 articles.

1. Single-layer MoS2 transistors;Radisavljevic;Nat. Nanotechnol.,2011

2. Topological mosaics in moiré superlattices of van der Waals heterobilayers;Tong;Nat. Phys.,2017

3. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe;Bandurin;Nat. Nanotechnol.,2017

4. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit;Huang;Nature,2017

5. Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe;Wei;Science,2020

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Indirect-to-direct band-gap transition in few-layer β -InSe as probed by photoluminescence spectroscopy;Physical Review Materials;2024-01-04

2. Phase Engineering of 2D Materials;Chemical Reviews;2023-08-17

3. Non-layered InSe nanocrystalline bulk materials with ultra-low thermal conductivity;Journal of Materiomics;2023-08

4. Remarkable plasticity and softness of polymorphic InSe van der Waals crystals;Journal of Materiomics;2023-07

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