Indirect-to-direct band-gap transition in few-layer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>β</mml:mi></mml:math> -InSe as probed by photoluminescence spectroscopy-Reference-Cited by-同舟云学术

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Indirect-to-direct band-gap transition in few-layer β -InSe as probed by photoluminescence spectroscopy

Published:2024-01-04 Issue:1 Volume:8 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Borodin B. R.,Eliseyev I. A.^ORCID,Galimov A. I.^ORCID,Kotova L. V.,Durnev M. V.,Shubina T. V.^ORCID,Yagovkina M. A.,Rakhlin M. V.^ORCID

Funder

Russian Science Foundation

St. Petersburg Science Foundation

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.8.014001/fulltext

Reference61 articles.

1. 2D materials: to graphene and beyond

2. Van der Waals heterostructures

3. Bandgap engineering of two-dimensional semiconductor materials

4. Promises and prospects of two-dimensional transistors

5. Layered materials as a platform for quantum technologies

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain-induced variations in the Raman and infrared spectra of monolayer InSe: A first-principles study;Journal of Applied Physics;2024-08-08

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