Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen-Reference-Cited by-同舟云学术

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Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen

Published:2014-06 Issue: Volume:305 Page:214-220
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Huang Jhih-Jie,Huang Li-Tien,Tsai Meng-Chen,Lee Min-Hung,Chen Miin-Jang

Funder

Taiwan Semiconductor Manufacturing Company

National Science Council in Taiwan

NSC

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference38 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

3. Structure and stability of ultrathin zirconium oxide layers on Si(001)

4. Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition

5. High dielectric constant gate oxides for metal oxide Si transistors

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1. Flexibility investigation of free-silicon organic–inorganic (ZrTiHfO2-PVP) hybrid films as a gate dielectric;Applied Physics A;2021-03-03

2. Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application;Coatings;2020-07-20

3. Nano-scale surface of ZrO2 ceramics achieved efficiently by peanut-shaped and heart-shaped SiO2 abrasives through chemical mechanical polishing;Ceramics International;2020-06

4. Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment;Materials Science in Semiconductor Processing;2020-04

5. Low temperature processing of BaTiO3-PMMA-PVP hybrid films as transparent dielectric gate;Journal of Materials Science: Materials in Electronics;2019-03-05

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