Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories-Reference-Cited by-同舟云学术

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Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

Published:2007-10 Issue:1 Volume:254 Page:312-315
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lee Seung-Yun,Yoon Sung-Min,Choi Kyu-Jeong,Lee Nam-Yeal,Park Young-Sam,Ryu Sang-Ouk,Yu Byoung-Gon,Kim Sang-Hoon,Lee Sang-Heung

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

1. Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies

2. Thermo-Electric Characterization of APCVD PolySi<tex>$_0.7hbox Ge _0.3$</tex>for IC-Compatible Fabrication of Integrated Lateral Peltier Elements

3. Polycrystalline silicon-germanium heating layer for phase-change memory applications

4. Thermal Stability and Electrical Resistivity of SiTaN[sub x] Heating Layer for Phase-Change Memories

5. Fabrication of a‐SiGe structure by rf sputtering for solar cell purposes

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructure evolution and FT-IR spectra of silicon induced by pulsed laser irradiation;SPIE Proceedings;2010-05-13

2. The Influence of Doping on the Chemical Composition, Morphology and Electrical Properties of Si(1−x)GexNanowires;The Journal of Physical Chemistry C;2010-03-18

3. Process compatible silicon–germanium–antimony heating layer for high density phase-change memory applications;Microelectronic Engineering;2008-12

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