Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
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4. Self-aligned Ti germanosilicide formation on a polycrystalline Si/SiGe/Si extrinsic base for SiGe heterojunction bipolar transistors;Lee;J Electron Mater,2003
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Emitter Scaling Dependence of Mixed-Mode Reliability Degradation in Silicon–Germanium Heterojunction Bipolar Transistors;Japanese Journal of Applied Physics;2008-07-11
2. Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories;Applied Surface Science;2007-10
3. Low power and high speed phase-change memory devices with silicon-germanium heating layers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
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