Composition and morphology of fluorinated anodic oxides on InAs (111)A surface-Reference-Cited by-同舟云学术

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Composition and morphology of fluorinated anodic oxides on InAs (111)A surface

Published:2010-07 Issue:19 Volume:256 Page:5722-5726
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Valisheva N.A.,Tereshchenko O.E.,Prosvirin I.P.,Levtsova T.A.,Rodjakina E.E.,Kovchavcev A.V.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference13 articles.

1. On the oxidation of III–V compound semiconductors

2. Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of Oxygen and Fluorine in Passivation of the GaSb(111) Surface Depending on Its Termination;Crystals;2022-03-30

2. Effect of Oxygen and Fluorine Absorption on the Electronic Structure of the InSb(111) Surface;Semiconductors;2020-01

3. Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma;Materials Science in Semiconductor Processing;2019-11

4. Fluorine and Oxygen Adsorption and Their Coadsorption on the (111) Surface of InAs and GaAs;The Journal of Physical Chemistry C;2016-08-03

5. InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge;Applied Physics Letters;2015-10-26

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