On the oxidation of III–V compound semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference33 articles.
1. Theory of the oxidation of metals
2. Electronic properties and chemical interactions at III–V compound semiconductor surfaces: Germanium and oxygen on GaAs(110) and InP(110) cleaved surfaces
3. Adsorption of germanium and of oxygen on cleaved InP(110) surfaces: Auger electron spectroscopy and measurements of work function and of surface photovoltage
4. Adsorption of oxygen on clean cleaved (110) gallium-arsenide surfaces
5. Surface characterisation of indium phosphide
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