Fluorine and Oxygen Adsorption and Their Coadsorption on the (111) Surface of InAs and GaAs-Reference-Cited by-同舟云学术

Fluorine and Oxygen Adsorption and Their Coadsorption on the (111) Surface of InAs and GaAs

Published:2016-08-03 Issue:31 Volume:120 Page:17491-17500
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Bakulin Alexander V.¹²,Kulkova Svetlana E.¹²,Aksenov Maxim S.³,Valisheva Natalia A.³

Affiliation:

1. Institute of Strength Physics and Material Science, Siberian Branch of the Russian Academy of Sciences, 2/4 Akademichesky Avenue, Tomsk, 634055, Russia

2. National Research Tomsk State University, 36 Lenina Avenue, Tomsk, 634050, Russia

3. Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 2 Pirogova Street, Novosibirsk, 630090, Russia

Funder

Russian Foundation for Basic Research

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b05308

Reference25 articles.

1. Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

2. The chemistry of the compound semiconductor-intrinsic insulator interface

3. Oxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation

4. InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge

5. The 1x384 hybrid linear infrared focal plane arrays on InAs MOS structure for spectrometric applications

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