Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array-Reference-Cited by-同舟云学术

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Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array

Published:2018-01 Issue: Volume:427 Page:876-883
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Jia Bo Wen,Tan Kian Hua,Loke Wan Khai,Wicaksono Satrio,Yoon Soon Fatt

Funder

Singapore National Research Foundation

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference56 articles.

1. The physics and technology of gallium antimonide: an emerging optoelectronic material;Dutta;J. Appl. Phys.,1997

2. Optical properties of GaSb alloys and photodiodes grown by liquid-phase epitaxy;Sun;J. Appl. Phys.,1996

3. Progress in infrared photodetectors since 2000;Downs;Sens.-Basel,2013

4. Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process;Tan;J. Cryst. Growth,2015

5. High-speed InSb photodetectors on GaAs for mid-IR applications;Kimukin;IEEE J. Sel. Top. Quantum Electron.,2004

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3. Nonlinear and Permanent Degradation of GaAs-Based Low-Noise Amplifier Under Electromagnetic Pulse Injection;IEEE Transactions on Electromagnetic Compatibility;2020-02

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