Optical properties of GaSb alloys and photodiodes grown by liquid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362972
Reference20 articles.
1. Growth‐temperature dependence of electrical and luminescent properties of high‐quality GaSb grown by liquid‐phase epitaxy
2. Photoluminescence of liquid‐phase epitaxial Te‐doped GaSb
3. The liquid-phase epitaxial growth of low net donor concentration (5 × 10<sup>14</sup>-5 × 10<sup>15</sup>/cm<sup>3</sup>) GaSb for detector applications in the 1.3 - 1.6 µm region
4. High‐purity GaSb epitaxial layers grown from Sb‐rich solutions
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