Atomic layer deposition HfO2 capping layer effect on porous low dielectric constant materials-Reference-Cited by-同舟云学术

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Atomic layer deposition HfO2 capping layer effect on porous low dielectric constant materials

Published:2015-11 Issue: Volume:354 Page:115-119
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Cheng Yi-Lung,Kao Kai-Chieh,Huang Chi-Jia,Chen Giin-Shan,Fang Jau-Shiung

Funder

National Science Council of the Republic of China, Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference20 articles.

1. Porous pSiCOH ultralow-k dielectrics for chip interconnects prepared by PECVD;Grill;Annu. Rev. Mater. Res.,2009

2. Plasma enhanced chemical vapor deposited SiCOH dielectrics: From low-k to extreme low-k interconnect materials;Grill;J. Appl. Phys.,2003

3. Ultraviolet irradiation effect on the properties of leakage current and dielectric breakdown of low-dielectric-constant SiOC(H) films using comb capacitor structure;Kim;Thin solid Films,2011

4. Processing and moisture effects on TDDB for Cu/ULK BEOL structures;Linigera;Microelectron. Eng.,2012

5. Mechanical properties of a plasma-modified porous low-k material;Broussous;Microelectron. Eng.,2010

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1. Performance investigation and impact of trap charges on novel lateral dual gate oxide-bilateral tunnelling based field effect transistor;Microelectronics Reliability;2023-01

2. Self-assembled monolayers on porous low-k dielectrics by decyltrimethoxysilane vapor treatment: A perspective from electrical characteristics and time-dependence-dielectric-breakdown reliability;Thin Solid Films;2022-12

3. Design and Performance Evaluation of a Novel Dual Tunneling based TFET Considering Trap Charges for Reliability Improvement;Silicon;2022-10-27

4. Nanotechnology of Molecular Layering in Production of Inorganic and Hybrid Materials for Various Functional Purposes: II. Molecular Layering Technology and Prospects for Its Commercialization and Development in the XXI Century;Russian Journal of Applied Chemistry;2021-09

5. Bias voltage effect on impedance, modulus and dielectric spectroscopies of HfO2-interlayered Si-based Schottky diodes at room temperature;Physica Scripta;2021-08-03

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