Bias voltage effect on impedance, modulus and dielectric spectroscopies of HfO2-interlayered Si-based Schottky diodes at room temperature
Author:
Funder
Gazi Üniversitesi
Türkiye Bilimsel ve Teknolojik Arastirma Kurumu
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
https://iopscience.iop.org/article/10.1088/1402-4896/ac1844/pdf
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3. Impact of nanoscale patterning on Schottky contact resistance in AlGaN/GaN Schottky barrier diode;Kim;Jpn. J. Appl. Phys.,2018
4. 2018 Hydrogen sensing characteristics of Pt Schottky diodes on ( 2¯ 01) and (010) Ga2O3 single crystals;Jang;ECS J. Solid State Sci. Technol.
5. Studies on the thermal stability of Ni/n-GaN and Pt/n-GaN Schottky barrier diodes;Kumar;Mater. Res. Express,2016
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