Design and Performance Evaluation of a Novel Dual Tunneling based TFET Considering Trap Charges for Reliability Improvement
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02188-3.pdf
Reference44 articles.
1. Boucart K, Ionescu AM (2007) Double-gate tunnel FET with high-$$\kappa$$ gate dielectric. IEEE Trans Electron Devices 54(7):1725–1733
2. Kim SW, Kim JM, Liu T-JK, Choi WY, Park B-G (2016) Demonstration of L-shaped tunnel field-effect transistors. IEEE Trans Electron Devices 63(4):1774–1778
3. Seabaugh C, Zhang Q (2010) Low-voltage tunnel transistors for beyond CMOS logic. Proc IEEE 98(12):2095–2110
4. Avci UE, Morris DH, Young LA (2015) Tunnel field-effect transistors: Prospects and challenges. IEEE J. Electron Devices Soc 3(3):88–95
5. Saripalli V, Mishra A, Datta S, Narayanan V (2011) An energy-efficient heterogeneous CMP based on hybrid TFET-CMOS cores. Proc. 48th ACM/EDAC/IEEE Design Autom Conf (DAC). New York, pp 729–734
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of interface trap charges on RF/analog performances of dual-gate-source-drain Schottky FET for high-frequency applications;Multiscale and Multidisciplinary Modeling, Experiments and Design;2024-04-06
2. Investigation and Analysis of Dual Metal Gate Overlap on Drain Side Tunneling Field Effect Transistor with Spacer in 10nm Node;International Journal of Engineering;2024
3. Design and analysis of novel bilateral tunnelling based tunnel FET considering workfunction engineered metal strip for enhanced performance;Microelectronics Journal;2023-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3