Optical properties of stacked Ge/Si quantum dots with different spacer thickness grown by chemical vapor deposition-Reference-Cited by-同舟云学术

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Optical properties of stacked Ge/Si quantum dots with different spacer thickness grown by chemical vapor deposition

Published:2004-03 Issue:1-4 Volume:224 Page:148-151
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chen Wen-Yen,Chang Wen-Hao,Chou An-Tai,Hsu Tzu-Min,Chen Pan-Shiu,Pei Zingway,Lai Li-Shyue

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference10 articles.

1. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells

2. Optical and structural investigation of SiGe/Si quantum wells

3. High‐temperature operation of strained Si0.65Ge0.35/Si(111)p‐type multiple‐quantum‐well light‐emitting diode grown by solid source Si molecular‐beam epitaxy

4. Photoluminescence and electroluminescence of SiGe dots fabricated by island growth

5. Photoluminescence investigation of phononless radiative recombination and thermal-stability of germanium hut clusters on silicon(001)

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1. Atomistic Simulations of Laser-Controlled Exciton Transfer and Stabilization in Symmetric Double Quantum Dots;The Journal of Physical Chemistry A;2021-05-28

2. Influence of ZnTe separation layer thickness on optical properties in CdTe/ZnTe double quantum dots on Si substrates;Thin Solid Films;2020-04

3. Activation energy and carriers dynamics of multilayer CdTe/ZnTe quantum dots with different ZnTe separation layer thicknesses;Materials Research Bulletin;2017-12

4. Emission characteristics of self-assembled strained Ge1−xSnxislands for sources in the optical communication region;Nanotechnology;2017-06-29

5. Laser-Driven Hole Trapping in a Ge/Si Core-Shell Nanocrystal: An Atomistic Configuration Interaction Perspective;J PHYS CHEM C;2015

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